Passivation of GaAs surface by ultrathin epitaxial GaN layer
نویسندگان
چکیده
Ultrathin gallium nitride passivation layers grown in situ on near-surface InxGa1 xAs=GaAs quantum wells using metalorganic vapour-phase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source are reported. Nitridation of GaAs using DMHy during the post-growth cool-down is also studied. The effect of passivation on the surface recombination rate of quantum well (QW) structures is characterized using low-temperature (10K) photoluminescence. Measured after growth, the GaN passivation is shown to enhance the PL intensity of the near-surface QWs approximately by a factor of 20. For samples stored in ambient air for 5 months, the enhancement is nearly 10: The results suggest that MOVPE-grown thin GaN layers are applicable to GaAs surface passivation. r 2004 Elsevier B.V. All rights reserved. PACS: 78.55. m; 78.66. w; 81.15.Gh; 81.65.Rv
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GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As–P exchange
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